IXFH15N100Q3

Name: IXYS IXFH15N100Q3
Brand: IXYS
SKU: 747-IXFH15N100Q3
Price: 153.14 HKD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

747-IXFH15N100Q3

製造商編號：

IXFH15N100Q3

製造商：

IXYS

說明：

MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A

規格書:

IXFH15N100Q3 規格書

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於IXYS IXFH15N100Q3的資訊

庫存量: 187

庫存：: 187

可立即送貨

發生意外錯誤了。請稍後再試。
在途量:: 300

預期16/11/2026
工廠前置作業時間：: 37

週工廠預計生產時間數量大於所顯示的數量。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$153.14	HK$153.14
	HK$108.18	HK$1,081.80
	HK$98.39	HK$11,806.80
	HK$81.95	HK$41,794.50

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1 kV
Id - C連續漏極電流:	15 A
Rds On - 漏-源電阻:	1.05 Ohms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	6.5 V
Qg - 閘極充電:	64 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	690 W
通道模式:	Enhancement
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
產品類型:	MOSFETs
上升時間:	250 ns
系列:	IXFH15N100
原廠包裝數量:	30
子類別:	Transistors
晶體管類型:	1 N-Channel
每件重量:	6 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

IXFH15N100Q3 規格書

此功能需要啟用JavaScript。

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

HiPerFET Power MOSFETs

IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances. These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types. View all .

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Q3-Class HiperFET™ Power MOSFETs

IXYS Q3-Class HiperFET™ Power MOSFETs provide the end-user with a broad range of devices with exceptional power-switching performance. They also offer excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. These MOSFETs come with drain-to-source voltage ratings of 200V to 1000V and drain current ratings of 10A to 100A. These features make the Q3-Class an optimized combination of low on-state resistance (R_dson) and gate charge (Q_g), substantially reducing the device's conduction and switching loss. Power switching capabilities and device ruggedness are further enhanced by utilizing the HiperFET process. This process yields a device with a fast intrinsic rectifier, which provides for a low reverse recovery charge (Q_rr) while enhancing the device's commutating dv/dt ratings (up to 50V/ns).

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.