IXBF42N300

IXYS
747-IXBF42N300
IXBF42N300

製造商:

說明:
MOSFET ISOPLUS 3KV 24A DIODE

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

供貨情況

庫存:
暫無庫存
工廠前置作業時間:
57 週 工廠預計生產時間。
此產品已報告長備貨期。
最少: 300   多個: 25
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$502.08 HK$150,624.00

商品屬性 屬性值 選擇屬性
IXYS
產品類型: MOSFET
RoHS:  
Si
Through Hole
ISOPLUS-i4-PAK-3
BIMOSFET
Tube
品牌: IXYS
產品類型: MOSFETs
原廠包裝數量: 25
子類別: Transistors
每件重量: 6.500 g
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

High Voltage Reverse Conducting (BiMOSFET™) IGBTs

IXYS High Voltage Series 2500V to 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high-voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode, making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.