IS42S83200G-6TL

ISSI
870-IS42S83200G-6TL
IS42S83200G-6TL

製造商:

說明:
DRAM 256M, 3.3V, SDRAM, 32Mx8, 166MHz, 54 pin TSOP II (400 mil) RoHS

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

供貨情況

庫存:
暫無庫存
工廠前置作業時間:
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$61.90 HK$61.90
HK$57.62 HK$576.20
HK$55.90 HK$1,397.50
HK$54.58 HK$2,729.00
HK$53.27 HK$5,753.16
HK$51.46 HK$11,115.36
HK$50.14 HK$27,075.60
HK$48.91 HK$52,822.80
2,592 報價

商品屬性 屬性值 選擇屬性
ISSI
產品類型: DRAM
RoHS:  
SDRAM
256 Mbit
8 bit
166 MHz
TSOP-II-54
32 M x 8
5.4 ns
3 V
3.6 V
0 C
+ 70 C
IS42S83200G
Tray
品牌: ISSI
組裝國家: Not Available
擴散國: Not Available
原產國: Not Available
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: DRAM
原廠包裝數量: 108
子類別: Memory & Data Storage
電源電流 - 最大值: 160 mA
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所選屬性: 0

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CNHTS:
8542319090
USHTS:
8542320024
JPHTS:
854232021
KRHTS:
8542321010
MXHTS:
8542320201
ECCN:
EAR99

3.3V Single Data Rate (SDR) Synchronous DRAM

ISSI 3.3V Single Data Rate (SDR) Synchronous DRAM provides a wide selection of SDR SDRAM with densities from 16Mbit to 512Mbit in 1Mx16, 4Mx16, and 8Mx16 organizations. Each device features a single supply voltage (3.3V +/-0.3V), standard SDRAM clock timing, LVTTL compatible inputs, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh modes. ISSI 3.3V SDR Synchronous DRAM has a programmable CAS latency of 2 or 3. Typical applications for these devices include wireless access points, base stations, routers, network storage, energy management, industrial controls, car infotainment, and automotive telematics.