DIW120SIC023-AQ

Diotec Semiconductor
637-DIW120SIC023-AQ
DIW120SIC023-AQ

製造商:

說明:
碳化矽MOSFET

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 707

庫存:
707 可立即送貨
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$717.44 HK$717.44
HK$577.29 HK$5,772.90
HK$577.21 HK$69,265.20

商品屬性 屬性值 選擇屬性
Diotec Semiconductor
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
125 A
23 mOhms
- 4 V, + 18 V
2.9 V
121 nC
- 55 C
+ 175 C
600 W
Enhancement
品牌: Diotec Semiconductor
配置: Single
互導 - 最小值: 21 S
封裝: Tube
產品類型: SiC MOSFETS
系列: 120SIC
原廠包裝數量: 30
子類別: Transistors
技術: SiC
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所選屬性: 0

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

TO-247-3L/4L Silicon Carbide (SiC) MOSFETs

Diotec Semiconductor TO-247-3L/4L Silicon Carbide (SiC) MOSFETs are ideally suited for high voltage and high frequency switching used in charging systems for electric vehicles (EV), solar inverters, or telecom power supplies. These MOSFETs feature a high 1200V and 650V reverse voltage, extremely low on-resistance, total Gate charge, low switching time, and low total switching energy. Advanced planar technology and the Silicon Carbide wafer material enable higher on-resistances at higher switching frequencies. These MOSFETs are used in DC-DC converters, DC drives, inverters, charging stations, Power Factor Correction (PFC), solar inverters, and power supplies.