AS4C64M16D3B-12BAN

Alliance Memory
913-A4C64M16D3B12BAN
AS4C64M16D3B-12BAN

製造商:

說明:
DRAM DDR3, 1G, 64M x 16, 1.5V, 96-ball FBGA, 800MHz, (B-die), Automotive Temp - Tray

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 154

庫存:
154 可立即送貨
工廠前置作業時間:
8 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$82.86 HK$82.86
HK$77.10 HK$771.00
HK$74.72 HK$1,868.00
HK$72.91 HK$3,645.50
HK$69.54 HK$6,954.00
HK$67.16 HK$12,760.40
HK$65.84 HK$37,528.80
HK$64.94 HK$74,031.60
2,660 報價

商品屬性 屬性值 選擇屬性
Alliance Memory
產品類型: DRAM
RoHS:  
SDRAM - DDR3
1 Gbit
16 bit
800 MHz
FBGA-96
64 M x 16
20 ns
1.425 V
1.575 V
- 40 C
+ 105 C
AS4C64M16D3B
Tray
品牌: Alliance Memory
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: DRAM
原廠包裝數量: 190
子類別: Memory & Data Storage
電源電流 - 最大值: 87 mA
每件重量: 3.698 g
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所選屬性: 0

CNHTS:
8542329000
CAHTS:
8542320020
USHTS:
8542320032
MXHTS:
8542320201
ECCN:
EAR99

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.