AS4C128M8D3LB-12BCNTR

Alliance Memory
913-4C1288D3LB12BCNT
AS4C128M8D3LB-12BCNTR

製造商：

說明：
DRAM 1G 1.35V 800MHz 128Mx8 DDR3 E-Temp

規格書:
ECAD模型:
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供貨情況

庫存：
暫無庫存
工廠前置作業時間：
8 週 工廠預計生產時間。
最少： 2500   多個： 2500
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
完整捲（訂購多個2500）
HK$43.65 HK$109,125.00

備用包裝

製造商 元件編號:
AS4C128M8D3LB-12BCN
包裝:
Tray
供貨情況:
庫存量
價格:
HK$70.28
最小值:
1

商品屬性 屬性值 選擇屬性
Alliance Memory
產品類型: DRAM
RoHS:  
SDRAM - DDR3L
1 Gbit
8 bit
800 MHz
FBGA-78
128 M x 8
225 ps
1.283 V
1.45 V
0 C
+ 95 C
AS4C128M8D3LB
Reel
品牌: Alliance Memory
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: DRAM
原廠包裝數量: 2500
子類別: Memory & Data Storage
電源電流 - 最大值: 72 mA
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所選屬性: 0

規格書

CAHTS:
8542320020
USHTS:
8542320032
MXHTS:
8542320201
ECCN:
EAR99

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.

DDR3L SDRAM

Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface that transfers two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. Alliance Memory DDR3L SDRAM is available in various package sizes.

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