AS4C128M32MD2A-18BIN

Alliance Memory
913-4C12832MD2A18BIN
AS4C128M32MD2A-18BIN

製造商:

說明:
DRAM LPDDR2, 4G,128M X 32, 1.2V, 134 BALL BGA, 533 MHZ, Industrial TEMP - Tray

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

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庫存:
0

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工廠前置作業時間:
20 週 工廠預計生產時間。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$150.10 HK$150.10
HK$139.25 HK$1,392.50
HK$134.89 HK$3,372.25
HK$131.60 HK$6,580.00
HK$125.85 HK$12,585.00
HK$122.64 HK$20,971.44
HK$120.75 HK$61,944.75

商品屬性 屬性值 選擇屬性
Alliance Memory
產品類型: DRAM
RoHS:  
SDRAM Mobile - LPDDR2
4 Gbit
32 bit
533 MHz
FBGA-134
128 M x 32
18 ns
1.14 V
1.95 V
- 40 C
+ 85 C
AS4C128M32MD2A-18
Tray
品牌: Alliance Memory
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: DRAM
原廠包裝數量: 171
子類別: Memory & Data Storage
電源電流 - 最大值: 130 mA
每件重量: 36.420 g
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所選屬性: 0

CNHTS:
8542329000
CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320201
ECCN:
EAR99

DDR2 SDRAM

Alliance Memory DDR2 SDRAM is designed to comply with DDR2 SDRAM key features. Features such as posted CAS# with additive latency, Write latency=Read latency -1, and On-Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in RAS #, CAS# multiplexing style.

低功率DDR2 SDRAM

Alliance Memory低功率DDR2 SDRAM是高速CMOS和動態存取記憶體,內部配置為8個儲蓄位記憶體裝置。 這些DDR2 SDRAM採用4位元預取DDR架構、可編程READ和WRITE潛伏期、自動溫度補償自我刷新(TCSR)及時鐘停止功能。DDR2 SDRAM在指令/地址(CA)匯流排上採用雙倍數據傳輸率架構,減少了系統內的輸入引腳數量。此CA匯流排用於傳送地址、指令和儲蓄位資訊。這些DDR2 SDRAM透過在DQ(雙向/查分數據匯流排)引腳上採用雙倍數據傳輸率架構,實現高速操作。