ALD210800PCL

Name: Advanced Linear Devices ALD210800PCL
Brand: Advanced Linear Devices
SKU: 585-ALD210800PCL
Price: 43.73 HKD
Availability: OutOfStock

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請參閱產品規格

Mouser 編號：

585-ALD210800PCL

製造商編號：

ALD210800PCL

製造商：

Advanced Linear Devices

說明：

MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY

規格書:

ALD210800PCL 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

供貨情況

庫存：: 暫無庫存

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工廠前置作業時間：: 請聯系洽詢價格和交期

輸入數量：

最少： 50 多個： 50

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

此產品免費航運

Pricing (HKD)

數量	單價	總價
	HK$43.73	HK$2,186.50
	HK$41.26	HK$41,260.00
2,500	報價

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商品屬性	屬性值	選擇屬性
製造商:	Advanced Linear Devices
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	PDIP-16
晶體管極性:	N-Channel
通道數:	4 Channel
Vds - 漏-源擊穿電壓:	10.6 V
Id - C連續漏極電流:	80 mA
Rds On - 漏-源電阻:	25 Ohms
Vgs - 閘極-源極電壓:	- 12 V, 12 V
Vgs th - 門源門限電壓 :	20 mV
最低工作溫度:	0 C
最高工作溫度:	+ 70 C
Pd - 功率消耗 :	500 mW
通道模式:	Enhancement
封裝:	Tube
品牌:	Advanced Linear Devices
配置:	Quad
產品類型:	MOSFETs
系列:	ALD210800P
原廠包裝數量:	50
子類別:	Transistors
晶體管類型:	4 N-Channel
標準斷開延遲時間:	10 ns
標準開啟延遲時間:	10 ns
每件重量:	1.025 g

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所選屬性: 0

篩選文檔:

規格書

ALD210800PCL 規格書 (PDF)

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541219000
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

Advanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays - INACTIVE

Advanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays are precision matched at the factory using ALD's proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110800A/ALD110800 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210800/ALD210800A features Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels.
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