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IPW60R024CFD7XKSA1

Name: Infineon IPW60R024CFD7XKSA1
Brand: Infineon Technologies
SKU: 726-IPW60R024CFD7XKS
Price: 130.7 HKD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

726-IPW60R024CFD7XKS

製造商編號：

IPW60R024CFD7XKSA1

製造商：

Infineon Technologies

說明：

MOSFET HIGH POWER_NEW

規格書:

IPW60R024CFD7XKSA1 規格書 (PDF)

ECAD模型:

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商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	77 A
Rds On - 漏-源電阻:	24 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	4 V
Qg - 閘極充電:	183 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	320 W
通道模式:	Enhancement
封裝:	Tube
品牌:	Infineon Technologies
配置:	Single
產品類型:	MOSFETs
系列:	IPW60R024CFD7
原廠包裝數量:	240
子類別:	Transistors
零件號別名:	IPW60R024CFD7 SP002621050
每件重量:	6 g

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所選屬性: 0

篩選文檔:

規格書

IPW60R024CFD7XKSA1 規格書 (PDF)

Models

IPW60R024CFD7XKSA1 Symbol & Footprint by SnapMagic

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合規守則

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

原產地分類

原產國:: 德國
封裝原產國:: 中國
擴散國:: 奧地利

出貨時，國家可能會有所變更。

CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

CoolMOS™超結MOSFET

英飛淩CoolMOS功率電晶體具有快速開關SJ MOSFET的所有優勢。結合最新一代CoolMOS 7，英飛淩不斷在價格、性能和品質等方面樹立標杆。

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.