Infineon Technologies FS50R12W2T7 & FS75R12W2T7 EasyPACK™ IGBT Modules

Infineon Technologies FS50R12W2T7 and FS75R12W2T7 EasyPACK™ IGBT Modules are 1200V three-phase input rectifier Insulated Gate Bipolar Transistor Modules. Based on TRENCHSTOP™ IGBT7 and Emitter Controlled 7 diode technology, these devices provide strongly reduced losses and are highly controllable. These modules are specially optimized for industrial drive applications, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained with an operation overload temperature up to +175°C in the power module. 

The FS50R12W2T7 and FS75R12W2T7 EasyPACK Modules are without base plates, instead featuring a fast, reliable, and low-cost injected screw clamp mount.

Features

  • High power density
  • Compact design
  • PressFIT contact technology
  • Low VCEsat
  • Trenchstop IGBT7
  • Overload operation up to +175°C
  • 5kVAC 1 min insulation
  • Al2O3 substrate with low thermal resistance

Applications

  • Auxiliary inverters
  • Air conditioning
  • Motor drives
  • Servo drives
  • UPS systems

Circuit Diagram

Infineon Technologies FS50R12W2T7 & FS75R12W2T7 EasyPACK™ IGBT Modules

Package Outline

Mechanical Drawing - Infineon Technologies FS50R12W2T7 & FS75R12W2T7 EasyPACK™ IGBT Modules
發佈日期: 2020-02-21 | 更新日期: 2024-10-03