IPA70R600P7SXKSA1

Infineon Technologies
726-IPA70R600P7XKSA1
IPA70R600P7SXKSA1

製造商:

說明:
MOSFET CONSUMER

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 15,558

庫存:
15,558
可立即送貨
在途量:
30,000
預期18/6/2026
30,000
預期6/8/2026
工廠前置作業時間:
25
工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$9.21 HK$9.21
HK$4.66 HK$46.60
HK$4.36 HK$436.00
HK$3.58 HK$1,790.00
HK$3.34 HK$3,340.00
HK$2.96 HK$14,800.00
HK$2.57 HK$64,250.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
700 V
8.5 A
600 mOhms
- 16 V, 16 V
2.5 V
10.5 nC
- 40 C
+ 150 C
24.9 W
Enhancement
CoolMOS
Tube
品牌: Infineon Technologies
配置: Single
下降時間: 23 ns
產品類型: MOSFETs
上升時間: 5.5 ns
系列: CoolMOS P7
原廠包裝數量: 500
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 63 ns
標準開啟延遲時間: 14 ns
零件號別名: IPA70R600P7S SP001499700
每件重量: 2 g
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

USB電源供應解決方案

Infineon Technologies USB電源供應解決方案符合比針對智慧型手機的一般充電設計更高額定功率的要求,提供比現有USB標準更高的功率等級。英飛凌供應包含低RDS(on)、高電壓和低電壓功率MOSFET等完整的半導體產品組合,適用於高功率密度,能適當解決熱管理和潛在電磁干擾 (EMI) 等問題。功率等級提高,能為硬碟機、印表機和顯示器,以及像是筆記型電腦等更大型的可攜式電子裝置供電。若要使用最高功率的模式,也需要有特殊額定值的USB纜線。USB PD作為單一纜線解決方案,是比現有USB互連產品更輕薄耐用的替代選擇。

CoolMOS™超結MOSFET

英飛淩CoolMOS功率電晶體具有快速開關SJ MOSFET的所有優勢。結合最新一代CoolMOS 7,英飛淩不斷在價格、性能和品質等方面樹立標杆。

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolMOS™ P7 MOSFETs

Infineon Technologies CoolMOS™ P7 MOSFETs deliver a best-in-class price/performance ratio with excellent ease of use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications, including adapters and chargers, lighting, audio SMPS, AUX, and industrial power. The 600V CoolMOS P7 power MOSFETs target low-power and high-power SMPS applications like solar inverters, servers, telecom, and EV charging stations. Infineon P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 

700V CoolMOS™ P7 MOSFETs

Infineon Technologies 700V CoolMOS™ P7 MOSFETs feature a revolutionary technology for high voltage power MOSFETs. The 700V are designed according to the superjunction (SJ) principle and pioneered by Infineon. The latest 700V CoolMOS P7 are an optimized platform tailored to target cost sensitive applications in consumer markets like chargers, adapters, lighting, TVs and more. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

CoolMOS™ 7超級結MOSFET

Infineon Technologies CoolMOS™ 7超級結MOSFET在能源效率、功率密度和使用便利性奠定新標準。CoolMOS 7技術採用創新的封裝概念與各種技術,係專為特定應用最佳化。CoolMOS 7 MOSFETS可用來縮小電動車充電站體積,提高其輸出,加快充電速度。CoolMOS 7的推出,使新一代的配接器和充電器體積更為輕巧、效率更優異。有了CoolMOS 7,將幫助工程師推出成本更低、效率更高的再生能源系統。