ROHM Semiconductor GNP1 EcoGaN™ 650V E-mode GaN FETs
ROHM Semiconductor GNP1 EcoGaN™ 650V E-mode Gallium-Nitride (GaN) FETs utilize low ON resistance and high-speed switching for power conversion efficiency and size reduction. The highly reliable GNP1 FETs provide built-in ESD protection and excellent heat dissipation, facilitating mounting. Applications include high switching frequency and high-density converters.
Features
- 650V E-mode GaN FETs
- Low ON resistance
- High-speed switching
- Built-in ESD protection
- Highly-reliable design
- Contributes to power conversion efficiency and size reduction
- Excellent heat dissipation
- RoHS compliant
Applications
- High switching frequency converters
- High density converters
Specifications
- GNP1070TC-Z
- DFN8080K package style
- 7.3A to 20A continuous drain current range
- 24A to 66A pulse drain current range
- 650V drain-source voltage
- 750V transient drain-source voltage
- -10VDC to +6VDC gate-source voltage range
- 8.5V transient gate-source voltage
- 56W power dissipation at +25°C
- 0.86Ω typical gate input resistance
- 200pF typical input capacitance
- 50pF typical output capacitance
- 44nC output charge
- 5.2nC typical total gate charge
- 5.9ns typical turn-on delay time
- 6.9ns typical rise time
- 8.0ns typical turn-off delay time
- 8.7ns typical fall time
- GNP1150TCA-Z
- DFN8080AK package style
- 5A to 11A continuous drain current range
- 17A to 35A pulse drain current range
- 650V drain-source voltage
- 750V transient drain-source voltage
- -10VDC to +6VDC gate-source voltage range
- 8.5V transient gate-source voltage
- 62.5W power dissipation at +25°C
- 2.6Ω typical gate input resistance
- 112pF typical input capacitance
- 19pF typical output capacitance
- 18.5nC output charge
- 2.7nC typical total gate charge
- 4.7ns typical turn-on delay time
- 5.3ns typical rise time
- 6.2ns typical turn-off delay time
- 8.3ns typical fall time
Additional Resources
Videos
發佈日期: 2023-05-16
| 更新日期: 2023-08-31